(China (Mainland))
Product Summary
The TPS2014DR is a power distribution switch which is intended for applications where heavy capacitive loads and short circuits are likely to be encountered. The TPS2014DR is a 95-mΩ N-channel MOSFET high-side power switch. The TPS2014DR is controlled by a logic enable compatible with 5-V logic and 3-V logic. Gate drive is provided by an internal charge pump designed to control the power-switch rise times and fall times to minimize current surges during switching. The charge pump requires no external components and allows operation from supplies as low as 4 V.
Parametrics
TPS2014DR absolute maixmum ratings: (1)Input voltage range, VI(IN): –0.3 V to 7 V; (2)Output voltage range, VO(OUT): –0.3 V to VI(IN) + 0.3 V; (3)Input voltage range, VI(EN): –0.3 V to 7 V; (4)Continuous output current, IO(OUT): internally limited; (5)Continuous total power dissipation: See Dissipation Rating Table; (6)Operating virtual junction temperature range, TJ: 0℃ to 125℃; (7)Storage temperature range, Tstg: –65℃ to 150℃; (8)Lead temperature soldering 1,6 mm (1/16 inch) from case for 10 seconds: 260℃.
Features
TPS2014DR features: (1)95-mΩ (5-V Input) High-Side MOSFET Switch; (2)Short-Circuit and Thermal Protection; (3)Operating Range: 4 V to 7 V; (4)Enable Input Compatible With 3-V and 5-V Logic; (5)Controlled Rise and Fall Times Limit Current Surges and Minimize EMI; (6)Undervoltage Lockout; (7)Maximum Standby Supply Current: 10 μA; (8)Available in 8-pin SOIC; (10)12-kV Output, 6-kV Input Electrostatic- Discharge Protection.
Diagrams
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 TPS2014DRG4 |
Texas Instruments |
Power Switch ICs - USB DUAL HI-SIDE MOSFET |
Data Sheet |
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TPS2014DR |
Texas Instruments |
Power Switch ICs - USB DUAL HI-SIDE MOSFET |
Data Sheet |
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