(China (Mainland))
Product Summary
The TPS1120DR incorporates two independent p-channel enhancement-mode MOSFETs that have been optimized, by means of the Texas Instruments LinBiCMOSE process, for 3-V or 5-V power distribution in battery-powered systems. With a maximum VGS(th) of -1.5 V and an IDSS of only 0.5 mA, the TPS1120DR is the ideal high-side switch for low-voltage portable battery-management systems, where maximizing battery life is a primary concern. Because portable equipment is potentially subject to electrostatic discharge (ESD), the MOSFETs have built-in circuitry for 2-kV ESD protection. End equipment for the TPS1120DR includes notebook computers, personal digital assistants (PDAs), cellular telephones, bar-code scanners, and PCMCIA cards. For existing designs, the TPS1120DRD has a pinout common with other p-channel MOSFETs in small-outline integrated circuit SOIC packages. The TPS1120DR is characterized for an operating junction temperature range, TJ, from –40℃ to 150℃.
Parametrics
TPS1120DR absolute maximum ratings: (1)Drain-to-source voltage, VDS: -15 V; (2)Gate-to-source voltage, VGS: 2 or -15 V; (3)Pulse drain current, ID TA = 25℃: ±7 A; (4)Continuous source current (diode conduction), IS TA = 25℃: -1 A; (5)Continuous total power dissipation: See Dissipation Rating Table; (6)Storage temperature range, Tstg: -55 to 150 ℃; (7)Operating junction temperature range, TJ: -40 to 150 ℃; (8)Operating free-air temperature range, TA: -40 to 125 ℃; (9)Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: 260 ℃.
Features
TPS1120DR features: (1)Low rDS(on): 0.18 W at VGS = -10 V; (2)3-V Compatible; (3)Requires No External VCC; (4)TTL and CMOS Compatible Inputs; (5)VGS(th) = -1.5 V Max; (6)ESD Protection Up to 2 kV per MIL-STD-883C, Method 3015.
Diagrams
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 TPS1120DR |
Texas Instruments |
MOSFET Dual P-Ch Enh-Mode MOSFET |
Data Sheet |
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TPS1120DRG4 |
Texas Instruments |
MOSFET Dual P-Ch Enh-Mode MOSFET |
Data Sheet |
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