Product Summary

The TPS1101DR is a single, low-rDS(on), P-channel, enhancement-mode MOSFET. The TPS1101DR has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of the Texas Instruments LinBiCMOSE process. With a maximum VGS(th) of –1.5 V and an IDSS of only 0.5 mA, the TPS1101DR is the ideal high-side switch for low-voltage, portable battery-management systems where maximizing battery life is a primary concern. The low rDS(on) and excellent ac characteristics (rise time 5.5 ns typical) of the TPS1101DR make it the logical choice for low-voltage switching applications such as power switches for pulse-width-modulated (PWM)controllers or motor/bridge drivers.

Parametrics

TPS1101DR absolute maximum ratings: (1)Drain-to-source voltage, VDS: -15 V; (2)Gate-to-source voltage, VGS: 2 or -15 V; (3)Pulsed drain current, ID: ±10A; (4)Continuous source current (diode conduction), IS: -1.1A; (5)Storage temperature range, Tstg: -55 to 150℃; (6)Operating junction temperature range, TJ: -40 to 150 ℃; (7)Operating free-air temperature range, TA: -40 to 125 ℃; (8)Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: 260 ℃.

Features

TPS1101DR features: (1)Low rDS(on) : 0.09 Ω Typ at VGS = –10 V; (2)3 V Compatible; (3)Requires No External VCC; (4)TTL and CMOS Compatible Inputs; (5)VGS(th) = -1.5 V Max; (6)Available in Ultrathin TSSOP Package (PW); (7)ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015.

Diagrams

TPS1101DR block daigram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
TPS1101DRG4
TPS1101DRG4

Texas Instruments

MOSFET Single P-Ch Enh-Mode MOSFET

Data Sheet

0-1790: $0.63
1790-2000: $0.60
2000-2500: $0.60
2500-5000: $0.58
TPS1101DR
TPS1101DR

Texas Instruments

MOSFET Single P-Ch Enh-Mode MOSFET

Data Sheet

0-1790: $0.63
1790-2000: $0.60
2000-2500: $0.60
2500-5000: $0.58