(China (Mainland))
Product Summary
The TPS1100DR is a single P-channel enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of Texas Instruments LinBiCMOSE process. With a maximum VGS(th) of –1.5 V and an IDSS of only 0.5 mA, the TPS1100DR is the ideal high-side switch for low-voltage, portable battery-management systems where maximizing battery life is a primary concern. The low rDS(on) and excellent ac characteristics (rise time 10 ns typical) make the TPS1100DR the logical choice for low-voltage switching applications such as power switches for pulse-width-modulated (PWM) controllers or motor/bridge drivers.
Parametrics
TPS1100DR absolute maximum ratings: (1)Drain-to-source voltage, VDS: -15 V; (2)Gate-to-source voltage, VGS: 2 or -15 V; (3)Pulsed drain current, ID: ±7A; (4)Continuous source current (diode conduction), IS: -1A; (5)Storage temperature range, Tstg: -55 to 150℃; (6)Operating junction temperature range, TJ: -40 to 150 ℃; (7)Operating free-air temperature range, TA: -40 to 125 ℃; (8)Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: 260 ℃.
Features
TPS1100DR features: (1)Low rDS(on) : 0.18 Ω Typ at VGS = –10 V; (2)3 V Compatible; (3)Requires No External VCC; (4)TTL and CMOS Compatible Inputs; (5)VGS(th) = –1.5 V Max; (6)Available in Ultrathin TSSOP Package (PW); (7)ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015.
Diagrams
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 TPS1100DR |
Texas Instruments |
MOSFET Single P-Ch Enh-Mode MOSFET |
Data Sheet |
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TPS1100DRG4 |
Texas Instruments |
MOSFET Single P-Ch Enh-Mode MOSFET |
Data Sheet |
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