TLE2061IDR

Product Summary

The TLE2061IDR low-power JFET-input operational amplifier doubles the bandwidth of the earlier generation TL06x and TL03x BiFET families without significantly increasing power consumption. Texas Instruments Excalibur process also delivers a lower noise floor than the TL06x and TL03x. On-chip zener trimming of offset voltage yields precision grades for dc-coupled applications. BiFET operational amplifiers offer the inherently-higher input impedance of the JFET-input transistors, without sacrificing the output drive associated with bipolar amplifiers. This makes TLE2061IDR better suited for interfacing with high-impedance sensors or low-level ac signals. They also feature inherently better ac response than bipolar or CMOS devices having comparable power consumption. The TLE2061IDR features a high-output-drive circuit capable of driving 100-Ω loads at supplies as low as ±5 V. This makes TLE2061IDR uniquely suited for driving transformer loads in modems and other applications requiring good ac characteristics, low power, and high output drive.

Parametrics

TLE2061IDR absolute maximum ratings: (1)Supply voltage, VCC+: 19 V; (2)Supply voltage, VCC: 19 V; (3)Differential input voltage, VID: ±38 V; (4)Input voltage range, VI: ±VCC; (5)Input current, II: ±1 mA; (6)Output current, IO: ±80 mA; (7)Total current into VCC+: 80 mA; (8)Total current out of VCC: 80 mA; (9)Duration of short-circuit current at (or below) 25℃ (see Note 3): unlimited; (10)Storage temperature range: -65℃ to 150℃; (11)Case temperature for 60 seconds: FK package: 260℃; (12)Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: D, P, or PW package: 260℃; (13)Lead temperature 1,6 mm (1/16 inch) from case for 60 seconds: JG, U, or W package: 300℃.

Features

TLE2061IDR features: (1)2× Bandwidth (2 MHz) of the TL06x and TL03x Operational Amplifiers; (2)Low Supply Current: 290 μA/Ch Typ; (3)On-chip Offset Voltage Trimming for Improved DC Performance; (4)High Output Drive, Specified into 100-Ω Loads; (5)Lower Noise Floor Than Earlier Generations of Low-Power BiFETs.

Diagrams